The CY9C62256 is a 32K x 8 magnetic nonvolatile CMOS RAM that employs an advanced magnetic RAM (MRAM) process. It provides fast read and write access, low power, and data retention for more than ten years. It is also available in JEDEC STD 28-pin DIP (600-mil), 28-pin (300-mil) SOIC, and 28-pin TSOP-1 packages.
This document provides a complete description of the CY9C62256 magnetic non‑volatile RAM. It outlines the memory architecture, functional operation, and key features such as 100 % form‑fit compatibility with standard 32K×8 SRAM, fast 70 ns read/write cycles, and automatic write‑protect on power loss.
Technical data include voltage ranges, temperature limits, electrical characteristics, timing diagrams, and package options (DIP, SOIC, TSOP‑1, etc.). The sheet also lists maximum ratings, power‑down/up behavior, and ordering information for commercial and industrial versions.
| Memory size | 32K × 8 bits |
|---|---|
| Operating voltage range | 4.5 V – 5.5 V |
| Read cycle time | 70 ns |
| Write cycle time | 70 ns |
| Data retention | > 10 years |
| Write endurance | > 10^15 cycles |
| Commercial temperature range | 0 °C to 70 °C |
| Industrial temperature range | -40 °C to 85 °C |
It operates from 4.5 V to 5.5 V.
Data is retained for more than ten years.