The CY7C1021BV33 is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an au- tomatic power-down feature that significantly reduces power consumption when deselected. It is available in 44-pin TSOP II and 400-mil SOJ as well as 48-Ball Mini BGA packages.
The CY7C1021BV33 is a high‑performance CMOS static RAM organized as 65,536 words by 16 bits, offering 3.3 V operation with low active and standby power. It includes automatic power‑down when deselected and independent control of upper and lower bits.
The document provides detailed functional description, pin configurations, maximum ratings, electrical and switching characteristics, data‑retention behavior, ordering information and package diagrams for the available 44‑pin TSOP II, 400‑mil SOJ and 48‑ball Mini‑BGA packages.
| Operating Voltage | 3.0 V – 3.6 V |
|---|---|
| Memory Size | 64K × 16 bits |
| Access Time (ns) | 8 – 15 |
| Maximum Operating Current (Commercial) (mA) | 170 / 160 / 150 / 140 |
| Package Types | 48‑Ball Mini BGA, 44‑Lead TSOP II, 400‑mil SOJ |
The device operates from 3.0 V to 3.6 V, with a nominal 3.3 V supply.
It provides 64 K words of 16 bits each, for a total of 1 Mbit of static RAM.
The SRAM is offered in a 48‑ball Mini‑BGA, a 44‑lead TSOP II, and a 400‑mil wide SOJ package.
The fastest version (‑8) has a maximum access time of 8 ns.