This datasheet introduces the features and characteristics of IDT71V67603/7803 SRAM. IDT71V67603/7803 SRAM is a high-performance SRAM organized as 256K x 36, 512K x 18, supports high system speed, supports 3.3V core power supply, supports 3.3V I/O, and is packaged in a JEDEC standard 100-pin thin plastic quad flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch ball grid array (fBGA).
The IDT71V67603 and IDT71V67803 are high‑speed 3.3 V synchronous SRAMs offered in 256K × 36 and 512K × 18 memory configurations. They support burst‑mode operation with pipelined outputs and provide clock access times as fast as 3.5 ns at 166 MHz. Features include self‑timed write cycles, global write enable, byte‑write enable, and a power‑down mode controlled by the ZZ input.
These devices are available in JEDEC‑standard 100‑pin thin‑plastic quad flat‑pack (TQFP), 119‑pin ball‑grid array (BGA) and 165‑pin fine‑pitch BGA (FBGA) packages. Commercial temperature range is 0 °C to +70 °C and industrial range is –40 °C to +85 °C. The datasheet includes pin‑out tables, absolute maximum ratings, recommended operating conditions, and ordering information.
| Memory configurations | 256K × 36, 512K × 18 |
|---|---|
| Core supply voltage | 3.3 V |
| Clock access time (166 MHz) | 3.5 ns |
| Clock access time (150 MHz) | 3.8 ns |
| Clock access time (133 MHz) | 4.2 ns |
| Power‑down control input | ZZ (asynchronous) |
| Commercial temperature range | 0 °C to +70 °C |
| Industrial temperature range | -40 °C to +85 °C |
| Package types | 100‑pin TQFP, 119‑pin BGA, 165‑pin FBGA |
The devices are offered in 256 K × 36 and 512 K × 18 configurations.
Commercial devices operate from 0 °C to +70 °C, while industrial‑grade parts operate from –40 °C to +85 °C.
They are available in a 100‑pin TQFP, a 119‑pin BGA, and a 165‑pin fine‑pitch BGA (FBGA).
At 166 MHz the SRAM provides a 3.5 ns clock access time.