This datasheet introduces the pin information of IDT71T75702/902
The IDT71T75702 and IDT71T75902 SRAMs are high‑speed 2.5 V synchronous ZBT devices that eliminate dead bus cycles between reads and writes. They provide 4‑word burst capability, individual byte write control, and a flow‑through output architecture with a single asynchronous output‑enable pin.
These devices are offered in JEDEC‑standard 100‑pin thin‑quad flat‑pack (TQFP) and 119‑ball‑grid‑array (BGA) packages. They operate over commercial (0 °C to +70 °C) and industrial (‑40 °C to +85 °C) temperature ranges and include a JTAG‑compliant boundary‑scan interface.
| Memory configurations | 512K × 36, 1M × 18 |
|---|---|
| Operating temperature (commercial) | 0 °C to +70 °C |
| Operating temperature (industrial) | -40 °C to +85 °C |
| Burst capability | 4‑word burst (interleaved or linear) |
| Package types | 100‑pin TQFP, 119‑pin BGA |
The IDT71T75702 provides 512 K × 36 bits, while the IDT71T75902 provides 1 M × 18 bits of memory.
They are available in a 100‑pin thin‑quad flat‑pack (TQFP) and a 119‑pin ball‑grid‑array (BGA).