The Toshiba 4N29 series (including 4N29A, 4N30‑4N33) are GaAs infrared LED and silicon phototransistor optocouplers designed for digital logic isolation, telephone line and twisted‑pair receivers, and relay contact monitoring. The datasheet provides maximum ratings, electrical characteristics, pin configurations and switching‑time graphs.
Key specifications such as isolation voltage, forward current, power dissipation and temperature ranges are listed, along with safety and handling notes for the GaAs material used in the devices.
| Switching Time (max) | 100 µs |
|---|---|
| Isolation Voltage (min) | 2500 V |
| DC Current Transfer Ratio | 500 % |
| Isolation Resistance (typ) | 10⁴ Ω |
| Forward Current (continuous) | 80 mA |
| Peak Forward Current | 3 A |
| Power Dissipation (per package) | 150 mW |
| Collector‑Emitter Voltage | 30 V |
| Storage Temperature Range | -55 °C to 150 °C |
| Operating Temperature Range | -55 °C to 100 °C |
| Lead Soldering Temperature | 260 °C |
The device can handle up to 80 mA continuous forward current.
The minimum isolation voltage is specified as 2500 V.
The switching time is rated at a maximum of 100 µs.