TC55V2161FT-85 datasheet
The TC55V2161FT SRAM provides 131,072 words of 16‑bit static memory, operating from a single 2.7 V to 3.6 V supply. It features low power consumption (3 mA/MHz) and a standby current of about 1 µA, making it suitable for battery‑backed microprocessor systems.
The device is supplied in a 44‑pin thin‑small‑outline (TSOP II) package and supports fast access times (read cycle 85‑100 ns, write cycle 85‑100 ns). Electrical ratings include a supply voltage range of 0.3 V to 4.6 V, operating temperature from 0 °C to 70 °C, and input/output capacitances of 10 pF each.
| Memory size | 131,072 words × 16 bits |
|---|---|
| Supply voltage (Vop) | 0.3 V to 4.6 V |
| Read cycle time | 85 ns – 100 ns |
| Write cycle time | 85 ns – 100 ns |
| Package | 44‑pin TSOP II (thin‑small‑outline) |
| Operating temperature range | 0 °C to 70 °C |
| Input capacitance | 10 pF |
| Output capacitance | 10 pF |
The device operates with a supply voltage (Vop) from 0.3 V up to 4.6 V.
It is available in a 44‑pin thin‑small‑outline (TSOP II) package.