RN2001-RN2006 is a PNP type bipolar transistor launched by Toshiba, which has the characteristic of integrated bias resistors, which can simplify circuit design, reduce the number of components and manufacturing processes, and is the complementary model of RN1001-RN1006.
The RN2001‑RN2006 series are PNP silicon epitaxial transistors offered by Toshiba for general electronics applications such as computers, office equipment, and industrial robotics. The document lists the equivalent circuit, bias resistor values, and typical collector, base, and emitter configurations.
Key specifications include maximum collector‑base and collector‑emitter voltages of –50 V, a collector current rating of –100 mA, and a transition frequency of 200 MHz. The datasheet also outlines storage temperature limits (‑55 °C to 150 °C) and usage restrictions, emphasizing that the devices are not intended for safety‑critical or high‑reliability systems.
| Junction Temperature (Tj) | 150 °C |
|---|---|
| Storage Temperature Range | -55 °C to 150 °C |
| Collector‑Base Capacitance (C_ob) at 1 MHz | 3 pF |
The maximum collector‑emitter voltage is –50 V.
They can be stored from –55 °C up to 150 °C.