2SB0938, 2SB0938A are silicon PNP epitaxial planar type Darlington for power amplification and switching, complementary to 2SD1261 and 2SD1261A.
The 2SB0938 and 2SB0938A are silicon PNP epitaxial planar Darlington power transistors designed for high‑speed switching and power amplification in small electronic equipment. They are supplied in an N‑type package that allows direct soldering of a heat‑sink fin to the PCB.
Key specifications include a collector‑emitter voltage of –60 V (–80 V for the A version), peak collector current of –8 A, and a power dissipation rating of 40 W. The datasheet also provides absolute maximum ratings, electrical characteristics, and typical application curves, along with export and usage notices.
| Peak Collector Current | -8 A |
|---|---|
| Storage Temperature Range | -55 °C to +150 °C |
| Maximum Junction Temperature | 150 °C |
Storage temperature is –55 °C to +150 °C, and the junction temperature must not exceed 150 °C.
Yes, an export permit must be obtained from the Japanese authorities for any export of these products.