The features of M29W320DT M29W320DB 32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory are introduced, including supply voltage, access time, programming time, storage blocks, programming/erasing controller, erase suspend and resume modes, unlock bypass program command, VPP/WP pin, temporary block unprotection mode, common flash interface, low power consumption, 100,000 programming/erase cycles per block, electronic signature and so on
The M29W320DT and M29W320DB are 32‑Mbit (4 Mb × 8 or 2 Mb × 16) non‑volatile flash memory devices that operate from a 2.7 V to 3.6 V supply. They include a 16 KB boot block, two 8 KB parameter blocks and 64 KB main blocks, totaling 67 memory blocks. The devices are offered in TSOP48, TFBGA63 and TFBGA48 packages.
Key features include fast programming (10 µs per byte/word typical), low access times (70 ns / 90 ns), up to 100 000 program/erase cycles per block, and an embedded program/erase controller that handles command sequencing. Optional VPP of 12 V enables fast programming, and the devices support standard JEDEC flash command sets with block protect/unprotect capabilities.
| Supply Voltage (VCC) | 2.7 V to 3.6 V |
|---|---|
| Fast‑Program Voltage (VPP) | 12 V (optional) |
| Access Time | 70 ns / 90 ns |
| Programming Time | 10 µs per Byte/Word (typical) |
| Memory Size | 32 Mbit (4 Mb × 8 or 2 Mb × 16) |
| Number of Memory Blocks | 67 (1 Boot, 2 Parameter, 64 Main) |
| Endurance | 100 000 program/erase cycles per block |
| Available Packages | TSOP48, TFBGA63, TFBGA48 |
It operates from a VCC of 2.7 V to 3.6 V, with an optional 12 V VPP for fast programming.
Each memory block is rated for up to 100 000 program/erase cycles.
The device provides 32 Mbit of storage, organized as 4 Mb × 8 or 2 Mb × 16, divided into 67 blocks including a boot block.
It is offered in TSOP48, TFBGA63, and TFBGA48 packages.