M29W040B 4 Mbit (512Kb x8, Uniform Block) Low Voltage Single Supply Flash Memory is a single power supply 2.7-3.6V Flash memory with a 55ns access time and 10µs/Byte programming time, supports 8 64K bytes of storage blocks, and embedded byte programming, multi-block/chip erase algorithm, status register polling and toggle bits, erase suspend and resume modes, unlock bypass programming command, low power consumption, 100,000 times/block of program/erase cycles and 20 years of data retention.
This document describes the M29W040B 4 Mbit (512 Kb × 8) low‑voltage single‑supply flash memory. It explains the device architecture, block organization, and the on‑chip Program/Erase controller that handles programming, erasing, and status monitoring. The memory operates from 2.7 V to 3.6 V and supports standard JEDEC bus operations.
The manual provides electrical ratings, timing diagrams, command sequences, and protection features. It lists the available ECOPACK® packages (TSOP32 8 × 20 mm, TSOP32 8 × 14 mm, PLCC32) and gives detailed information on bus read/write cycles, status register bits, and erase‑suspend/resume functionality.
| Supply Voltage | 2.7 V to 3.6 V |
|---|---|
| Access Time | 55 ns |
| Memory Size | 4 Mbit (512 Kb × 8) |
| Number of Memory Blocks | 8 uniform 64 KB blocks |
| Program/Erase Endurance | 100,000 cycles per block |
| Data Retention | 20 years |
| Package Types | TSOP32 (8 × 20 mm), TSOP32 (8 × 14 mm), PLCC32, ECOPACK® |
The device operates from 2.7 V to 3.6 V.
Each memory block is rated for 100,000 program/erase cycles.
It is available in TSOP32 (8 × 20 mm), TSOP32 (8 × 14 mm), PLCC32, and ECOPACK® lead‑free packages.
The access time is specified as 55 ns.