This document describes the features and characteristics of the M29W320DT and M29W320DB models of Flash memory released in March 2008, Rev 10. It includes information about the supply voltage range, access time, programming time, memory block quantity, programming/erase controller, erase suspend and resume modes, fast programming and write protect, low power consumption, program/erase cycle count, electronic signature, etc.
The M29W320DT and M29W320DB are 32‑Mbit (4 Mbyte × 8 or 2 Mbyte × 16) non‑volatile flash memories offered in TSOP48 and TFBGA48 packages. They operate from a 2.7 V to 3.6 V supply and support fast programming at 12 V Vpp. The memory is organized into 67 blocks, including a boot block, two parameter blocks and multiple main blocks, each independently erasable and protectable.
The device complies with JEDEC standards, provides on‑chip program/erase control, low‑power standby modes, and a 64‑bit security code. Detailed pin‑outs, timing diagrams, command sets and electrical characteristics are provided for system integration.