This document details the features of NAND01G-B2B and NAND02G-B2C, including high density NAND flash memories, NAND interface, power voltage, page size, block size, page read/program, copy back program mode, fast block erase, status register, electronic signature, chip enable 'don't care', serial number option, data protection, data integrity, ECOPACK® packages, development tools, etc.
The Numonyx NAND01G-B2B and NAND02G-B2C are high‑density NAND flash memories ranging from 1 Gbit to 2 Gbits. They operate at 1.8 V or 3.0 V and are offered in x8 and x16 bus widths with multiplexed address/data lines to reduce pin count.
The devices include features such as cache program/read, copy‑back programming, hardware block locking, and an open‑drain ready/busy output. They are supplied in TSOP48 and VFBGA63 packages and support up to 100 000 program/erase cycles with 10‑year data retention.
| Memory density | Up to 2 Gbits |
|---|---|
| Supply voltage | 1.8 V / 3.0 V |
| Page size (x8) | 2048 bytes + 64 bytes spare |
| Page size (x16) | 1024 words + 32 words spare |
| Block size (x8) | 128 KB + 4 KB spare |
| Block size (x16) | 64 KB + 2 KB spare |
| Random page read time | ≤ 25 µs |
| Page program time | ≈ 200 µs (typ) |
| Block erase time | ≈ 2 ms (typ) |
| Endurance cycles | 100 000 program/erase cycles per block |
| Data retention | 10 years |
The devices operate from either a 1.8 V or a 3.0 V supply.
Random page reads take up to 25 µs.
Each block can be programmed and erased up to 100 000 times.