This document describes the features and characteristics of M29W160ET and M29W160EB 16 Mbit flash memory. The flash memory has features such as supply voltage range, access times, programming time, memory block quantity, programming/erase controller, unlock bypass program command, temporary block unprotection mode, common flash interface, low power consumption, programming/erase cycles, etc.
The M29W160ET/EB provides 16 Mbit (2 Mb × 8 or 1 Mb × 16) non‑volatile storage that can be read, programmed and erased with a single low‑voltage supply (2.7 V‑3.6 V). The memory is organized into 35 blocks, including a boot block for initialization code, two parameter blocks, and 32 main blocks for application data. Each block can be protected independently and supports erase‑suspend and resume operations.
The device is offered in TSOP48 (12 × 20 mm) and TFBGA48 (0.8 mm pitch) packages. It features low standby power, 100 k program/erase cycles per block, and standard JEDEC‑compatible command sets for easy integration with micro‑processors.
| Supply voltage (Vcc) | 2.7 V to 3.6 V |
|---|---|
| Access times | 70 ns (read), 90 ns (write) |
| Programming time | 10 µs per byte/word (typical) |
| Endurance | 100 000 program/erase cycles per block |
| Package options | TSOP48 (12 × 20 mm) and TFBGA48 (0.8 mm pitch) |
The device operates from 2.7 V to 3.6 V.
Each block is rated for 100 000 program/erase cycles.
It is available in TSOP48 (12 × 20 mm) and TFBGA48 (0.8 mm pitch) packages.