This file introduces the features of Numonyx™ StrataFlash® Cellular Memory (M18) Datasheet, including high-performance read, program and erase, architecture, quality and reliability, power consumption, etc.
This document is a technical datasheet for the Numonyx StrataFlash Cellular Memory (M18) family of NOR Flash devices. It details product features such as high-performance read access times up to 96 ns and support for frequencies up to 133 MHz with zero wait-state synchronous burst reads.
The datasheet provides comprehensive specifications including absolute maximum ratings, DC current and voltage requirements, AC timing characteristics for various bus interfaces (x16D, x16G, Split Bus), and program/erase operations. It also covers security features like OTP registers and block locking, as well as ordering information for different densities ranging from 128-Mbit to 1-Gbit.
| Initial Read Access Time | 96 ns |
|---|---|
| Maximum Frequency (Sync) | 133 MHz |
| Core Voltage Range | 1.7 V - 2.0 V |
| Standby Current (512-Mbit) | 60 µA (typ) |
| Deep Power-Down Current | 2 µA (typ) |
| Program Suspend Time | 20 µs (typ) |
| Block Erase Time | 0.9 s per block (typ) |
| Erase Cycles Per Block | 100,000 |
| Operating Temperature Range | -30 °C to +85 °C |
The device is available in 128-, 256-, and 512-Mbit, and 1-Gbit densities.
The device operates with a core voltage and I/O voltage between 1.7 V and 2.0 V.
The memory supports a minimum of 100,000 erase cycles per block.