This datasheet provides information on Numonyx™ Wireless Flash Memory (W18/W30 SCSP) 32WQ and 64WQ family products, including flash density, async PSRAM density, voltage, packaging, PSRAM performance, SRAM performance, quality and reliability, flash performance, flash architecture, etc.
This datasheet covers the Numonyx™ Wireless Flash Memory (W18/W30 SCSP) 32WQ and 64WQ families with asynchronous RAM. The document details device architecture, including flash densities of 32-Mbit and 64-Mbit, and PSRAM densities of 16-Mbit and 32-Mbit. It specifies operating voltages of 1.8 V and 3.0 V, with access times ranging from 65 ns to 70 ns depending on the voltage and memory type.
The document provides comprehensive information on package dimensions, ballout, signal descriptions, and maximum ratings. It includes detailed electrical and AC characteristics for Flash, SRAM, and PSRAM operations, along with power consumption data. Operational procedures for reading, programming, erasing, and security modes are also described, alongside ordering information for active and retired line items.
| Flash Density | 32-Mbit, 64-Mbit |
|---|---|
| Async PSRAM Density | 16-Mbit, 32-Mbit |
| Flash VCC Voltage | 1.8 V |
| Flash VCCQ Voltage | 1.8 V or 3.0 V |
| RAM VCC Voltage | 1.8 V or 3.0 V |
| Initial Access Time (1.8 V I/O) | 65 ns |
| Initial Access Time (3.0 V I/O) | 70 ns |
| Async Page Read Time (1.8 V) | 25 ns |
| Sync Read Time (1.8 V) | 14 ns |
| Sync Read Time (3.0 V) | 20 ns |
| Package Ball Count | 88 balls |
| Package Area | 8x10 mm |
| Package Height | 1.2 mm to 1.4 mm |
| Flash Technology | 90 nm ETOX™ IX flash technology |
| Flash Technology | 130 nm ETOX™ VIII flash technology |
| Extended Temperature Range | -25 °C to +85 °C |
| Minimum Flash Block Erase Cycle | 100K |
The flash densities are 32-Mbit and 64-Mbit.
The initial access time is 65 ns at 1.8 V I/O.