Key facts
- Brand
- Numonyx
- Model
- X16
- Industry
- Industrial
- Documents
- 3
- Languages
- EN
- Last added
- 2012-06-04
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NUMONYX M36L0T7050T2 M36L0T7050B2 128 Mbit (Multiple Bank Multi-Level Burst) Flash memory 32 Mbit (2Mb x16) PSRAM Multi-Chip Package
The M36L0T7050T2 and M36L0T7050B2 devices are offered as a stacked TFBGA88 multi‑chip package that integrates a 128‑Mbit multiple‑bank flash memory and a 32‑Mbit pseudo‑SRAM. The document describes the functional operation of both memory components, their pin assignments, and recommended operating conditions.
Key specifications include supply voltage ranges, read/write timing, power‑down modes, and endurance. The package is supplied with all bits erased and is intended for use in applications that require both non‑volatile flash storage and fast SRAM access within a single footprint.
Numonyx X16 specifications
| Flash memory capacity | 128 Mbit (8 Mb × 16) |
|---|---|
| PSRAM capacity | 32 Mbit (2 Mb × 16) |
| Flash programming supply voltage (Vppe) | 1.7 V to 1.95 V |
| Flash core supply voltage (Voce/Vppg) | 2.7 V to 3.1 V |
| Fast program voltage (Vppr) | 9 V |
| Synchronous burst read speed | 52 MHz |
| Random access read time | 85 ns |
| PSRAM access time | 65 ns |
| PSRAM 8‑word page access time | 18 ns |
| PSRAM standby current | 100 µA |
| PSRAM deep power‑down current | 10 µA |
| Program/erase endurance per block | 100 000 cycles |
| Number of flash memory banks | 8 Mbit banks |
All Numonyx X16 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
- NUMONYX M36L0T7050T2 M36L0T7050B2 128 Mbit (Multiple Bank Multi-Level Burst) Flash memory 32 Mbit (2Mb x16) PSRAM Multi-Chip Package 22 p
- NUMONYX M29W160ET M29W160EB 16 Mbit (2Mb x8 or 1Mb x16 Boot Block) 3V Supply Flash Memory Manual 40 p
- NUMONYX M29W320DT M29W320DB 32 Mbit (4Mb x8 or 2Mb x16 Boot Block) 3V Supply Flash Memory Manual 46 p
Questions answered in these manuals
What is the voltage range for the flash programming supply (Vppe)?
The flash programming supply voltage (Vppe) is specified as 1.7 V to 1.95 V.
How many banks does the flash memory contain?
The flash memory is organized into eight 8‑Mbit banks.
What supply voltage range does the M29W160ET/EB require?
The device operates from 2.7 V to 3.6 V.
From: NUMONYX M29W160ET M29W160EB 16 Mbit (2Mb x8 or 1Mb x16 Boot Block) 3V Supply Flash Memory Manual
How many program/erase cycles can each block endure?
Each block is rated for 100 000 program/erase cycles.
From: NUMONYX M29W160ET M29W160EB 16 Mbit (2Mb x8 or 1Mb x16 Boot Block) 3V Supply Flash Memory Manual
What supply voltage does the M29W320DT/DB require?
It operates from a VCC of 2.7 V to 3.6 V, with an optional 12 V VPP for fast programming.
From: NUMONYX M29W320DT M29W320DB 32 Mbit (4Mb x8 or 2Mb x16 Boot Block) 3V Supply Flash Memory Manual
How many program/erase cycles can each block endure?
Each memory block is rated for up to 100 000 program/erase cycles.
From: NUMONYX M29W320DT M29W320DB 32 Mbit (4Mb x8 or 2Mb x16 Boot Block) 3V Supply Flash Memory Manual