JANTX2N6806, JANTXV2N6806 are high-performance power MOSFETs from International Rectifier. They feature low on-state resistance, high switching speed, ease of paralleling, temperature stability and are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
![international IOR rectifier JANTX2N6806 JANTXV2N6806 [REF:MIL-PRF-19500/562] [GENERIC:IRF9230] handbook - cover page](/uploads/covers/19/19812a5c3a36012322b6d0a67b374c16.jpg)
The International Rectifier JANTX2N6806 (N‑channel) and JANTXV2N6806 (P‑channel) are 200 V HEXFET power MOSFETs designed for low on‑resistance, high transconductance and fast switching. They are suitable for switching power supplies, motor controls, inverters, choppers, audio amplifiers and high‑energy pulse circuits where reliability is required.
The datasheet provides absolute maximum ratings, detailed electrical parameters such as drain‑to‑source breakdown voltage, on‑state resistance, gate charge and thermal resistance, as well as package dimensions (TO‑204AA, modified TO‑3). It also includes typical output and transfer characteristic curves and notes on avalanche energy and pulse handling limits.
| Drain‑to‑Source Breakdown Voltage (BVds) | 200 V |
|---|---|
| Continuous Drain Current (Id) | 6.5 A (N‑channel) / 4.0 A (P‑channel) |
| Maximum Power Dissipation (Pd) | 75 W |
| Gate‑to‑Source Voltage (Vgs) | +20 V |
| On‑State Resistance (Rds(on)) | 0.080 Ω (typical at Vgs = –10 V, Id = –4 A) |
| Total Gate Charge (Qg) | 31 nC |
| Package | TO‑204AA (Modified TO‑3) |
The continuous drain current is rated at 6.5 A.
The device can tolerate a gate‑to‑source voltage of up to +20 V.
It is housed in a TO‑204AA (modified TO‑3) case.
Typical Rds(on) is 0.080 Ω when Vgs = –10 V and Id = –4 A.