This datasheet provides detailed information on the IRS2111. The IRS2111 is a high voltage, high speed power MOSFET and IGBT driver with dependent high-side and low-side referenced output channels designed for half-bridge applications.
The IRS2111(S)PbF is a high‑voltage, high‑speed half‑bridge driver for MOSFET and IGBT power switches. It features a floating channel for bootstrap operation, a wide gate‑drive supply range (10 V‑20 V) and built‑in dead‑time to prevent shoot‑through.
The device is supplied in 8‑lead PDIP and SOIC packages, is RoHS compliant, and is qualified for industrial use. Detailed absolute maximum ratings, recommended operating conditions and dynamic electrical characteristics are provided for design engineers.
| High‑side floating supply voltage (VB) max | 625 V |
|---|---|
| Gate‑drive supply range | 10 V to 20 V |
| Turn‑on propagation delay (typ) | 750 ns |
| Turn‑off propagation delay (typ) | 150 ns |
| Storage temperature range | -55 °C to 150 °C |
| RoHS compliance | Yes |
The device can tolerate up to 625 V on the high‑side floating supply (VB).
The recommended supply voltage for the floating channel (VB) is 10 V to 20 V, and the same range applies to Vs.
Yes, the part is RoHS compliant.
It is offered in 8‑lead PDIP (IRS2111PbF) and 8‑lead SOIC (IRS2111SPbF) packages, as well as tape‑and‑reel versions.