PMV213SN is an N-channel enhancement mode field-effect transistor using TrenchMOS™ technology. It has low on-state resistance in a small surface mount package. Suitable for DC-to-DC primary side switching.
The PMV213SN is a N‑channel enhancement mode field‑effect transistor packaged in a plastic SOT‑23 package using Philips' TrenchMOS™ technology. It is intended for DC‑to‑DC primary‑side switching applications and offers a low on‑state resistance in a compact surface‑mount form.
The data sheet provides the device’s pin configuration, absolute maximum ratings, thermal characteristics, static and dynamic electrical parameters, and typical performance curves. It also includes product status information, revision history, and legal notices from Philips Semiconductors.
| Maximum gate‑source voltage (VGS) | 30 V |
|---|---|
| Junction temperature range | -55 °C to +150 °C |
The junction temperature can be operated from –55 °C up to +150 °C.