PHK12NQ10T is an N-channel enhancement mode field-effect transistor using TrenchMOS™ technology. It has low on-state resistance and is suitable for applications such as DC-to-DC converters and portable equipment.
The PHK12NQ10T is an N‑channel enhancement mode field‑effect transistor built with Philips' TrenchMOS technology. It is supplied in a plastic SOT96‑1 (SO8) package with eight leads and is intended for DC‑to‑DC converter primary side and portable equipment applications.
This datasheet details the device's pin configuration, ordering information, limiting values, thermal characteristics, and electrical performance such as voltage ratings, current capability, on‑state resistance, capacitances and gate charge. It also includes revision history, data‑sheet status and legal notices.
The device is rated for storage and junction temperatures from –55 °C to +150 °C.