PHK28NQ03LT TrenchMOS logic level FET is an N-channel enhancement mode field-effect transistor made using TrenchMOS technology and packaged in a plastic case SOT96-1 (SO8).
The Philips PHK28NQ03LT is an N‑channel enhancement mode TrenchMOS logic‑level field‑effect transistor packaged in an SOT96‑1 (SO‑8) case. It is intended for use in DC‑to‑DC converters and switched‑mode power supplies where low gate charge and logic‑level drive are required.
The datasheet lists key electrical limits such as a 30 V drain‑source rating, 20 V gate‑source rating, a continuous drain current of 23.7 A at 25 °C, and a peak pulse current of 60 A. Thermal data include a maximum dissipation of 6.25 W and an operating temperature range from –55 °C to +150 °C.
| Gate‑source voltage (Vgs) max | 20 V |
|---|---|
| Junction temperature range | -55 °C to +150 °C |
The device operates from –55 °C up to +150 °C.