This document is a product specification for the BAP50-03 general purpose PIN diode produced by Philips Semiconductors. The diode features low diode capacitance and low diode forward resistance, making it suitable for general RF applications.
This datasheet describes the Philips BAP50-03 general‑purpose PIN diode, including its features, applications, and ordering information. The device is offered in a plastic surface‑mounted SOD323 package and is intended for RF applications.
Key specifications such as reverse voltage, forward current, power dissipation, temperature limits, capacitance, and thermal resistance are listed, along with graphical data illustrating forward resistance, capacitance, insertion loss, and isolation versus frequency.
| Maximum reverse voltage (Ve) | 50 V |
|---|---|
| Maximum forward current (Ir) | 50 mA |
| Total power dissipation (Prot) | 500 mW |
| Storage temperature range (Tstg) | -65 °C to +150 °C |
| Junction temperature range (Tj) | -65 °C to +150 °C |
| Typical forward voltage at 50 mA | 0.95 V |
| Typical reverse current at 50 V | 100 nA |
| Diode capacitance at 1 MHz | 0.4 pF |
| Thermal resistance (junction‑to‑solder) | 85 K/W |
The diode can withstand a continuous reverse voltage of 50 V.
At 50 mA the typical forward voltage is about 0.95 V.
The device is rated for storage temperatures from –65 °C to +150 °C.
It is supplied in a plastic surface‑mounted SOD323 package with two leads.