This document is about Zetex ZXMN2B01F 20V SOT23 N-channel enhancement mode MOSFET datasheet, introduces the features and characteristics, applications, technical specifications and other information of the device.
The ZXMN2B01F MOSFET from Zetex features a trench structure that provides low on‑resistance even with a low gate‑drive voltage. It is offered in a compact SOT‑23 package and is intended for use in DC‑DC converters, power‑management functions, disconnect switches, and motor‑control applications.
Key specifications include a 20 V drain‑source rating, 2.4 A continuous drain current at Vgs = 4.5 V, typical on‑resistance of 0.100 Ω, and input/output capacitances of 370 pF and 81 pF respectively. The datasheet also provides thermal characteristics, switching times, and package dimensions for design reference.
| Drain‑source voltage (Vds) | 20 V |
|---|---|
| Gate‑source voltage (Vgs) | 8 V |
| Continuous drain current (Id) at Vgs=4.5 V | 2.4 A |
| Typical on‑resistance (Rds(on)) at Vgs=4.5 V | 0.100 Ω |
| Input capacitance (Ciss) | 370 pF |
| Output capacitance (Coss) | 81 pF |
| Total gate charge (Qg) | 4.8 nC |
| Package type | SOT‑23 |
The device is rated for a maximum drain‑source voltage of 20 V.
Typical on‑resistance is 0.100 Ω when Vgs = 4.5 V.
The MOSFET is supplied in an SOT‑23 surface‑mount package.