This document describes the features and characteristics of the M28W640FCT and M28W640FCB, two models of 64 Mbit flash memory products.
The M28W640FCT and M28W640FCB are 64‑Mbit (4 Mbit × 16) non‑volatile flash memories with block‑level erase and word‑by‑word in‑system programming. They feature a dual‑supply architecture (2.7 V‑3.6 V core Vpp and 1.65 V‑3.6 V I/O Vppa) and an optional 12 V Vpp for fast programming. Each device contains 135 blocks (8 parameter blocks and 127 main blocks) with instant, individual block locking and three levels of protection.
The devices are offered in TSOP48 (12 × 20 mm) and TFBGA48 (6.39 × 10.5 mm, 0.75 mm pitch) packages, comply with lead‑free soldering standards, and include a 192‑bit protection register (64‑bit unique ID and 128‑bit OTP). The command set follows JEDEC standards and supports program/erase suspend, resume, and up to 100 000 program/erase cycles per block.
| Core Supply Voltage (Vpp) | 2.7 V to 3.6 V |
|---|---|
| I/O Supply Voltage (Vppa) | 1.65 V to 3.6 V |
| Fast‑Program Supply (optional) | 12 V |
| Access Time | 70 ns, 85 ns, 90 ns, 100 ns |
| Typical Programming Time | 10 µs |
| Program/Erase Endurance per Block | 100,000 cycles |
| Memory Size | 64 Mbit (4 Mbit × 16) |
| Number of Blocks | 135 blocks (8 Parameter + 127 Main) |
| Package Types | TSOP48 (12 × 20 mm) and TFBGA48 (6.39 × 10.5 mm, 0.75 mm pitch) |
| Security Features | 128‑bit OTP cells, 64‑bit unique device identifier |
The core Vpp supply is 2.7 V to 3.6 V, the I/O Vppa supply is 1.65 V to 3.6 V, and an optional 12 V Vpp can be used for fast programming.
Each block can be programmed and erased up to 100,000 times.
They are available in TSOP48 (12 × 20 mm) and TFBGA48 (6.39 × 10.5 mm, 0.75 mm pitch) packages.
All blocks are locked at power‑up; any combination of blocks can be locked or locked‑down, and a Write‑Protect (WP) pin provides block lock‑down capability.