STY60NM50 is a member of the MDmesh™Power MOSFET family, which has excellent low on-resistance, high dv/dt and excellent avalanche characteristics, suitable for high voltage converters to increase power density and achieve system miniaturization and higher efficiency
The STY60NM50 is a 500 V N‑channel power MOSFET based on STMicroelectronics' MDmesh™ technology, offering low on‑resistance, high dv/dt, and strong avalanche capability. It is designed for high‑voltage converters where power density, efficiency, and miniaturisation are critical.
The document lists absolute maximum ratings, detailed electrical characteristics (including drain current, gate charge, and switching times), thermal data such as junction‑to‑case resistance, and mechanical dimensions. It also includes test circuit diagrams and safety notices for use in non‑life‑support applications.
| Drain‑source voltage (VDS) | 500 V |
|---|---|
| Continuous drain current (ID) at 25 °C | 60 A |
| Maximum power dissipation (PD) | 560 W |
| Avalanche current (IAval) | 30 A |
| Storage temperature range | -65 °C to 150 °C |
| Maximum junction temperature (Tj) | 150 °C |
| Thermal resistance, junction‑to‑case (Rthj‑case) | 0.22 °C/W |
| Thermal resistance, junction‑to‑ambient (Rthj‑amb) | 30 °C/W |
The device can conduct up to 60 A continuously at a junction temperature of 25 °C.
The MOSFET is rated for a maximum drain‑source voltage of 500 V.
It can sustain an avalanche current of up to 30 A (repetitive or non‑repetitive).