This document introduces the characteristics of the L6384 product, including high voltage range, current capability, switching time, input type, etc.
The L6384 is a high‑voltage half‑bridge driver capable of driving N‑channel MOSFETs or IGBTs with a rail up to 600 V. It features CMOS/TTL compatible inputs, integrated bootstrap diode, and programmable dead‑time via an external resistor.
The document provides absolute maximum ratings, recommended operating conditions, electrical characteristics, mechanical dimensions and thermal data, as well as detailed pin descriptions and typical performance graphs.
| Supply voltage range | 0.3 V to 14.6 V |
|---|---|
| Source current capability | 400 mA |
| Sink current capability | 650 mA |
| Switching times (rise/fall) | 50 ns rise / 30 ns fall (1 nF load) |
| Total power dissipation | 750 mW (Tj = 85 °C) |
| Junction temperature limit | 150 °C |
| Storage temperature range | -50 °C to 150 °C |
It can source 400 mA and sink 650 mA.
The total power dissipation is limited to 750 mW at a junction temperature of 85 °C.
The recommended supply voltage is between 0.3 V and 14.6 V.