The STD5NM50 is a member of the MDmesh™ family of products. It offers outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. This product is suitable for increasing power density of high voltage converters, allowing system miniaturization and higher efficiencies.
The STD5NM50 is a 500 V N‑channel power MOSFET offered in DPAK (TO‑252) and IPAK (TO‑251) packages. It features a very low on‑resistance, high avalanche capability and fast switching performance, making it suitable for high‑density power converters.
The document lists absolute maximum ratings, detailed electrical parameters such as drain current, on‑resistance and gate charge, thermal resistance values, as well as mechanical dimensions and recommended shipment formats.
| Drain‑source voltage (VDS) | 500 V |
|---|---|
| Continuous drain current (ID) at 25 °C | 75 A |
| Maximum power dissipation (PD) | 100 W |
| Typical on‑resistance (RDS(on)) | 0.72 mΩ |
| Avalanche current (IAvalanche) | 2.5 A |
| Package types | DPAK (TO‑252) and IPAK (TO‑251) |
The device is rated for a maximum drain‑source voltage of 500 V.
It can conduct up to 75 A continuously at a case temperature of 25 °C.
The MOSFET is offered in DPAK (TO‑252) and IPAK (TO‑251) surface‑mount packages.
The typical on‑resistance is 0.72 mΩ.