This document is the specification sheet of ZXMN2F34MA product, mainly introduces its product characteristics, application scenarios, package form, performance parameters and so on
The ZXMN2F34MA is a 20 V N‑channel enhancement mode MOSFET offered in a compact 2 mm × 2 mm DFN322 package. It features low on‑resistance and can be driven with a 2.5 V gate voltage, making it suitable for high‑efficiency power conversion.
Key specifications include a maximum drain‑source voltage of 20 V, continuous drain current up to 5.1 A, typical on‑resistance of 0.060 Ω at VGS = 4.5 V, and a total gate charge of 2.8 nC. The device is intended for buck/boost DC‑DC converters, motor control, and LED lighting applications.
| Drain‑Source Voltage (VDS) | 20 V |
|---|---|
| Gate‑Source Voltage (VGS) | +12 V |
| Continuous Drain Current (ID) @ VGS=4.5 V, 25 °C | 5.1 A |
| On‑Resistance (RDS(on)) Typical | 0.060 Ω |
| Total Gate Charge (Qg) | 2.8 nC |
| Package Type | DFN322 (2 mm × 2 mm) |
| Package Length (A) | 0.80‑1.00 mm |
The device can tolerate up to 20 V between drain and source.
It is supplied in a DFN322 surface‑mount package measuring 2 mm × 2 mm.
Typical on‑resistance is 0.060 Ω when VGS = 4.5 V.
It is used in buck/boost DC‑DC converters, motor control circuits, and LED lighting.