This document describes an N-channel power MOSFET called STS4DNF60L. It features low on-resistance, standard packaging, and low threshold drive. It is suitable for applications such as DC motor drive, DC-DC converters, and battery management.
The STS4DNF60L is a single‑feature‑size strip‑based N‑channel MOSFET offering a typical on‑resistance of 0.045 Ω and a maximum drain‑source voltage of 60 V. It is packaged in a SO‑8 surface‑mount package for easy automated assembly.
Key applications include DC motor drive, DC‑DC converters and battery‑management in nomadic equipment. The device provides robust avalanche capability, low threshold drive, and a wide operating temperature range from –55 °C to 150 °C. This manual is written in Chinese.
| Drain‑source Voltage (VDS) | 60 V |
|---|---|
| Typical On‑Resistance (RDS(on)) | 0.045 Ω |
| Package | SO‑8 (tape & reel) |
| Operating Temperature Range | -55 °C to 150 °C |
The device is rated for a maximum drain‑source voltage of 60 V.
Its typical on‑resistance is 0.045 Ω.
It is supplied in an SO‑8 surface‑mount package, available on tape and reel.