STMicroelectronics STTH1002C High Efficiency Ultrafast Diode Datasheet

The datasheet is for the STTH1002C. The product features include low loss, low forward and reverse recovery time, high junction temperature and low leakage current.


STMicroelectronics STTH1002C High Efficiency Ultrafast Diode Datasheet - cover page
Brand
STMicroelectronics
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
8
File format
PDF
File size
110 KB
Published
10 April, 2012
Updated
30 September, 2023
MD5 checksum
54C5AC7A1C3495DE47A196E7E5E7B5B6

About this manual

The STTH1002C ultrafast diode is designed for switch‑mode power supplies and high‑frequency DC‑DC converters. It features low losses, fast recovery times, and an insulated TO‑220FPAB package, making it suitable for low‑voltage inverters, free‑wheeling and polarity‑protection applications.

The datasheet provides key parameters such as a 200 V reverse voltage rating, 20 A RMS forward current, typical forward voltage drop of 0.78 V at 5 A, and a maximum junction temperature of 175 °C. Mechanical data for DPAK, D2PAK, TO‑220AB, TO‑220FPAB and I2PAK packages are also listed.

What's inside

  • Description
  • Features and Benefits
  • Electrical Characteristics
  • Thermal Parameters
  • Package Mechanical Data
  • Specifications
  • Legal Disclaimer

Specifications

Repetitive peak reverse voltage (VRRM)200 V
Maximum junction temperature (Tj max)175 °C

Frequently asked questions

What is the maximum reverse voltage rating of the STTH1002C diode?

The diode is rated for a repetitive peak reverse voltage of 200 V.

Which package types are available for the STTH1002C?

It is offered in DPAK, D2PAK, TO‑220AB, TO‑220FPAB, and I2PAK packages.

What is the maximum operating junction temperature?

The maximum junction temperature is 175 °C.

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