HCF4069UB is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages. The HCF4069UB consists of six COS/MOS inverter circuits. This device is intended for all general purpose inverter applications where the medium power TTL-drive and logic level conversion capabilities of circuits such HCF4049B HEX INVERTER/BUFFERS are not required.
The HCF4069UB hex inverter from STMicroelectronics integrates six COS/MOS inverter circuits in a monolithic IC. It is intended for general‑purpose inverter applications where medium‑power TTL‑drive and level‑conversion are not required.
The datasheet provides absolute maximum ratings, recommended operating conditions, DC and dynamic electrical characteristics, propagation‑delay times, output drive capabilities, and mechanical dimensions for both DIP‑14 and SOP‑14 packages.
| Supply Voltage (VDD) | -0.5 V to +22 V |
|---|---|
| Input Leakage Current | 100 nA (max) at VDD = 18 V |
| Quiescent Current | Specified up to 20 V |
| Propagation Delay (VDD = 5 V) | 55 ns typical |
| Power Dissipation per Package | 200 mW |
| Operating Temperature Range | -55 °C to +125 °C |
The device can operate with a supply voltage from –0.5 V up to +22 V.
At a 5 V supply the typical propagation delay is 55 ns.
Quiescent current is specified up to 20 V supply.