IRFP3077PbF is a power MOSFET with low Rdson (on-resistance), suitable for applications such as high efficiency synchronous rectification, uninterruptible power supply, high speed power switching, and hard switched and high frequency circuits.
The IRFP3077PbF is a high‑efficiency HEXFET® Power MOSFET designed for synchronous rectification in SMPS, uninterruptible power supplies, and high‑speed switching circuits. It offers low on‑resistance, high current capability, and robust avalanche performance.
The datasheet lists absolute maximum ratings, detailed electrical and thermal parameters, avalanche and diode characteristics, as well as typical output, capacitance, and gate‑charge curves. Package information for the TO‑247AC case and recommended layout considerations are also included.
| Continuous Drain Current (Id) @ 25°C | 2000 A |
|---|---|
| Maximum Power Dissipation (Pmax) | 340 W |
| Gate‑to‑Source Voltage (Vgs) | +20 V |
| On‑Resistance (Rds(on)) Typical | 28 mΩ |
| Junction‑to‑Case Thermal Resistance (RθJC) | 0.44 °C/W |
| Single‑Pulse Avalanche Energy | 200 mJ |
| Package Type | TO‑247AC |
The device can handle up to 2000 A of continuous drain current at 25 °C (silicon limited).
The gate threshold voltage is typically 20 V.
A soldering temperature of 300 °C for 10 seconds is recommended.
It is supplied in a TO‑247AC package.