IPA90R1K2C3 CoolMOS™ Power Transistor Features, the lowest figure-of-merit RON x Qg, extreme dv/dt rated, high peak current capability, qualified according to JEDEC1) for target applications, Pb-free lead plating; RoHS compliant, Ultra low gate charge. CoolMOS™ 900V is designed for: Quasi Resonant Flyback / Forward topologies, PC Silverbox and consumer applications, Industrial SMPS.
The IPASOR1K2C3 is a 900 V CoolMOS power transistor designed for quasi‑resonant flyback/forward topologies, PC‑Silverbox, consumer and industrial SMPS applications. It offers ultra‑low gate charge, high peak current capability, and is RoHS‑compliant.
The document provides maximum ratings, thermal and electrical characteristics, dynamic behavior, gate‑charge data, and package dimensions for the PG‑TO220 FP package. It also includes legal disclaimer and contact information for Infineon Technologies AG.
| Continuous drain current (Id) at 25 °C | 5.1 A |
|---|---|
| Pulsed drain current (Id,pulse) at 25 °C | 10 A |
| Avalanche energy, single pulse | 68 mJ |
| Gate threshold voltage (Vgs(th)) | 2.5 V |
| Drain‑source on‑state resistance (Rds(on)) at 25 °C | 0.94 mΩ |
The maximum continuous drain current at 25 °C is 5.1 A.