IGP03N120H2 IGW03N120H2 are high-performance IGBT transistors with a 1200V rated voltage and 3A rated current. These IGBT transistors are manufactured using Infineon's high-performance HighSpeed2 technology, which provides excellent switching performance and temperature stability. They are suitable for various power conversion applications, such as SMPS, lamp ballasts and ZVS converters.
The Infineon IGP03N120H2 and IGW03N120H2 are 1200 V, 3 A IGBT devices designed for SMPS, lamp ballast, and ZVS‑converter applications. They feature high‑speed 2‑technology optimized for soft‑switching and resonant topologies, offering loss reduction, temperature‑stable behavior, and tight parameter distribution.
The datasheet provides maximum ratings such as a collector‑emitter voltage of 1200 V, continuous collector current of 3 A, turn‑off energy of 0.15 mJ, and a junction temperature limit of 150 °C. Additional specifications include a gate‑emitter voltage of ±20 V, power dissipation of 62.5 W, and pulsed collector current capability up to 9.6 A.
| Collector‑emitter voltage (VCE) | 1200 V |
|---|---|
| Continuous collector current (IC) | 3 A |
| Maximum junction temperature (Tj) | 150 °C |
| Power dissipation (Ptot) | 62.5 W |
| Gate‑emitter voltage (VGE) | ±20 V |
The device is rated for a maximum collector‑emitter voltage of 1200 V.
It can handle a continuous collector current of 3 A.
The maximum junction temperature is 150 °C.