This document introduces a product called VDS, which has multiple features and characteristics, including temperature range, voltage, power, etc.
The SPDO4N60C3 and SPU04N60C3 are Cool MOS™ power transistors featuring ultra‑low gate charge, periodic avalanche rating, high peak current capability and improved transconductance. They are supplied in TO‑252 (PG‑TO252) and TO‑251 (PG‑TO251) packages and are RoHS compliant.
The document provides maximum ratings such as 45 A continuous drain current, 600 V drain‑source breakdown voltage, and 50 W power dissipation, as well as detailed thermal characteristics, on‑state resistance, gate charge curves and switching performance for use in high‑voltage, high‑speed applications.
| Power dissipation (P_D) | 50 W |
|---|---|
| Gate‑source voltage (static) | +20 V |