BFR182W is an NPN silicon RF transistor designed for low noise, high gain broadband amplifiers with collector currents ranging from 1mA to 20mA. It has a frequency of 8GHz and a gain of 1.2dB at 900MHz.
The BFR182W is an NPN silicon RF transistor designed for low‑noise, high‑gain broadband amplifiers with collector currents from 1 mA to 20 mA. It is supplied in a compact SOT‑323 package and is suitable for applications up to 8 GHz.
The datasheet lists maximum ratings, detailed DC and AC characteristics, transition frequency, noise figure, and a complete set of SPICE (Gummel‑Poon) model parameters. For further design information, contact an Infineon distributor or visit the Infineon website.
The SPICE (Gummel‑Poon) model parameters are listed in the SPICE Parameters section of the datasheet.