The features of IPW60R165CP CoolMOSTM power transistor include lowest figure-of-merit RONxQg, ultra low gate charge, extreme dv/dt rated, high peak current capability, qualified according to JEDEC1) for target applications, Pb-free lead plating, RoHS compliant. CoolMOS CP is specially designed for hard switching topologies in server and telecom applications.
The IPW60R165CP is a CoolMOS power transistor from Infineon Technologies AG. It is designed for hard‑switching topologies in server and telecom applications and complies with JEDEC and RoHS standards.
The datasheet provides maximum ratings, thermal and electrical characteristics, dynamic behavior, gate‑charge data, typical output and transfer curves, as well as mechanical dimensions and package information.
| Continuous drain current (Id) @ 25 °C | 21 A |
|---|---|
| Pulsed drain current (Id,pulse) @ 25 °C | 61 A |
| Drain‑source breakdown voltage (Vds) | 600 V |
| Gate threshold voltage (Vgs(th)) | 2.5 V – 3.5 V |
| On‑state resistance (Rds(on)) typical @ 25 °C | 0.15 Ω |
| Input capacitance (Ciss) | 2000 pF |
| Output capacitance (Coss) typical | 100 pF |
| Total gate charge (Qg) | 39 nC |
| Maximum avalanche energy (single pulse) | 522 mJ |
The device can conduct a continuous drain current of 21 A at 25 °C.
Typical Rds(on) is 0.15 Ω at 25 °C.
The gate‑threshold voltage ranges from 2.5 V to 3.5 V.
A single pulse can store up to 522 mJ of avalanche energy.