SPP11N60C3 SPI11N60C3, SPA11N60C3 is a new high voltage technology power transistor with ultra low gate charge, periodic avalanche rating, extreme dv/dt rating, high peak current capability and improved transconductance.
The SPP11N60C3 is a 850 V, 11 A Cool MOS™ power transistor from Infineon Technologies. The document provides detailed maximum ratings, thermal parameters, and electrical characteristics for the device in various package types (PG‑TO220‑3, PG‑TO262‑3, etc.).
Key sections include maximum voltage and current ratings, on‑state resistance, gate charge data, transient thermal impedance, and safe operating area curves, along with reference dimensions and compliance information.
| Continuous drain current (ID) at 25 °C | 11 A |
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The continuous drain current is rated at 11 A at 25 °C.