IPP50R199CP CoolMOSTM power transistor features the lowest figure-of-merit RON x Qg, ultra-low gate charge, extreme dv/dt rated, high peak current capability, and is compliant with RoHS. It is designed for hard and soft switching SMPS topologies, CCM PFC, and PWM applications.
The IPP50R199CP is a CoolMOS CP power transistor designed for hard and soft switching SMPS topologies, including ATX, notebook adapters, PDP and LCD TV applications. It offers ultra‑low gate charge, low on‑state resistance, high peak current capability, and is RoHS compliant.
The document lists maximum ratings such as continuous drain current of 17 A, pulsed drain current of 40 A, power dissipation of 139 W, and an operating temperature range from –55 °C to 150 °C. Detailed electrical, thermal, and dynamic characteristics are provided for design and application engineers.
| Continuous drain current (Id) | 17 A @ 25 °C |
|---|---|
| Pulsed drain current (Id,pulse) | 40 A @ 25 °C |
| Power dissipation (Pd) | 139 W @ 25 °C |
| Operating temperature range | -55 °C to 150 °C |
| On‑state resistance (Rds(on)) | 0.199 Ω typical @ 25 °C |
| Gate threshold voltage (Vgs(th)) | 2.5 V typical (3 V max) |
| Input capacitance (Ciss) | 1800 pF typical |
| Output capacitance (Coss) | 80 pF typical |
| Total gate charge (Qg) | 34 nC typical |
The device can handle a continuous drain current of 17 A at 25 °C.
Typical on‑state resistance is 0.199 Ω at 25 °C.
It operates from –55 °C up to 150 °C.