IPB60R199CP CoolMOS TM Power Transistor Features: Lowest figure-of-merit RONxQg; Ultra low gate charge; Extreme dv/dt rated; High peak current capability; Qualified according to JEDEC1) for target applications; Pb-free lead plating; RoHS compliant. CoolMOS CP is specially designed for hard switching topologies, for server and telecom applications.
The IPB60R199CP is a CoolMOS power transistor designed for hard‑switching applications such as server and telecom power supplies. It features a low figure‑of‑merit Rds(on), ultra‑low gate charge and high peak current capability, and complies with JEDEC and RoHS standards.
The datasheet lists maximum ratings, thermal characteristics, static and dynamic electrical parameters, as well as package dimensions (TO‑263/PG‑TO263). It also includes typical output and transfer characteristics, gate‑charge curves, and diode recovery data useful for circuit designers.
| Continuous drain current (Id) at 25 °C | 16 A |
|---|---|
| Pulsed drain current (Id,pulse) at 25 °C | 51 A |
| Power dissipation (Pd) at 25 °C | 139 W |
The maximum continuous drain current is 16 A at 25 °C.
It is supplied in a TO‑263 (PG‑TO263) surface‑mount package.