Infineon SPI15N65C3 CoolMOS Power Transistor Datasheet

SPI15N65C3 CoolMOSTM Power Transistor features low gate charge, extreme dv/dt rating, high peak current capability and qualified according to JEDEC1) for target applications and Pb-free lead plating; RoHS compliant. CoolMOS C3 designed for: Notebook Adapter.


Infineon SPI15N65C3 CoolMOS Power Transistor Datasheet - cover page
Brand
Infineon
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
10
File format
PDF
File size
299 KB
Published
06 April, 2012
Updated
30 September, 2023
MD5 checksum
62227C5E57D12E52FFA46E8D5C867D2A

About this manual

The Infineon SPI15N65C3 is a CoolMOS™ power transistor offered in a TO‑262‑3‑1 package. The datasheet provides a product summary, maximum ratings, thermal and electrical characteristics, and detailed dynamic parameters such as capacitances and gate charge.

Key sections cover power dissipation limits, safe operating area, transient thermal impedance, and mechanical outline dimensions. The document also includes legal notices and contact information for Infineon Technologies AG.

What's inside

  • Product Summary
  • Maximum Ratings
  • Thermal Characteristics
  • Electrical Characteristics
  • Dynamic Characteristics
  • Gate Charge Characteristics
  • Reverse Diode Characteristics
  • Power Dissipation
  • Safe Operating Area
  • Package Outline

Specifications

Maximum power dissipation (Pd)156 W
Package typeTO‑262‑3‑1

Frequently asked questions

What is the package type of the SPI15N65C3?

The transistor is supplied in a TO‑262‑3‑1 package.

What is the maximum power dissipation allowed?

The maximum power dissipation is rated at 156 W at 25 °C.

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