Infineon BSO200N03S Datasheet

BSO200N03S OptiMOS®2 power transistor is a fast switching MOSFET designed for switch mode power supplies (SMPS). It features optimized technology for notebook DC/DC conversion. It is an N-channel MOSFET with logic level drive. It has excellent gate charge multiplied by on-resistance (FOM), very low on-resistance, avalanche and dv/dt ratings. It is lead-free plated and RoHS compliant.


Infineon BSO200N03S Datasheet - cover page
Brand
Infineon
Category
power switch
Document type
Datasheet
Language
English
Pages
9
File format
PDF
File size
275 KB
Published
06 April, 2012
Updated
28 September, 2023
MD5 checksum
097D20E48A389B111BEC0A3A625CACED

About this manual

The BSO200N03S is an N‑channel, logic‑level OptiMOS®2 power MOSFET designed for SMPS and notebook DC/DC applications. It offers low on‑resistance, fast switching, and avalanche and dv/dt ratings.

Key specifications include a continuous drain current of 8.8 A at 25 °C, Rds(on) of 16.6 mΩ at Vgs = 10 V, gate threshold voltage between 1.2 V and 1.6 V, and a maximum power dissipation of 1.56 W. The device is supplied in a PG‑DSO‑8 package and operates from –55 °C to 150 °C.

What's inside

  • Product Summary
  • Maximum Ratings
  • Thermal Characteristics
  • Electrical Characteristics
  • Dynamic Characteristics
  • Gate Charge Characteristics
  • Avalanche Characteristics
  • Package Outline
  • Safe Operating Area

Specifications

On‑state resistance (Rds(on))16.6 mΩ (Vgs = 10 V)
PackagePG‑DSO‑8

Frequently asked questions

What package does the BSO200N03S use?

It is supplied in a PG‑DSO‑8 surface‑mount package.

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