This document describes the features of SPU02N60S5 and SPD02N60S5 Cool MOS™ power transistors. These transistors utilize a new high voltage technology and have ultra-low gate charge, periodic avalanche rating, and extreme dv/dt rating. They also have ultra-low effective capacitances and improved transconductance. The document provides the maximum ratings for these products, such as continuous drain current, pulsed drain current, avalanche energy, etc.
The SPU02N60S5 is a Cool MOS™ power transistor featuring ultra‑low gate charge, low on‑state capacitances, and high voltage capability. It is offered in PG‑TO251 and PG‑TO252 surface‑mount packages and is RoHS‑compliant.
The document lists maximum ratings such as continuous drain current, pulsed current, avalanche energy, and thermal characteristics, together with detailed electrical parameters like breakdown voltage, capacitances, and gate charge. Package dimensions and reference dimensions are also provided for PCB layout.
| Continuous drain current (Id) @ 25°C | 1.8 A |
|---|---|
| Continuous drain current (Id) @ 100°C | 1.1 A |
| Avalanche energy (single pulse) | 50 mJ |
| Gate‑source voltage (continuous) | +20 V |
| Power dissipation @ 25°C | 25 W |
| Operating temperature range | -55 °C … +150 °C |
The continuous drain current is rated at 1.8 A at 25 °C.
The device can dissipate up to 25 W at a case temperature of 25 °C.
It operates from –55 °C up to +150 °C.
The gate‑source voltage is rated at +20 V (continuous) and +30 V AC for frequencies above 1 Hz.