IPW60R075CP CoolMOSTM Power Transistor is a low power loss power transistor with extremely low on-resistance and charge, capable of withstanding voltages up to 650V. It is designed for hard switching SMPS topologies for Server and Telecom applications.
The IPW60R075CP is a CoolMOS CP power transistor designed for hard‑switching SMPS applications in server and telecom equipment. It features a low RON·Qg figure‑of‑merit, high dv/dt capability, and a high peak current rating, and complies with JEDEC and RoHS standards.
The document provides maximum ratings, thermal characteristics, dynamic and static electrical parameters, gate‑charge data, capacitance values, and package details (PG‑TO247‑3). It also includes safety and handling notes for the component. This manual is written in Chinese.
| Drain‑source breakdown voltage (VBRDSS) | 600 V |
|---|---|
| Maximum on‑state resistance (RDS(on),max) | 0.075 Ω |
| Typical gate charge (Qg) | 87 nC |
| Gate‑threshold voltage (VGS(th), typ) | 2.5 V |
| Input capacitance (Ciss, typ) | 4000 pF |
| Package type | PG‑TO247‑3 |
The device is rated for a maximum drain‑source voltage of 600 V.
The typical gate charge is 87 nC.
It is supplied in a PG‑TO247‑3 package.
Yes, it has Pb‑free lead plating and is RoHS compliant.