Infineon IPP50R399CP CoolMOS Power Transistor Datasheet

IPP50R399CP is a CoolMOSTM power transistor that features the lowest RON x Qg figure-of-merit, ultra-low gate charge, extreme dv/dt rating, high peak current capability, lead-free lead plating and RoHS compliance. It is qualified according to JEDEC1) for target applications.


Infineon IPP50R399CP CoolMOS Power Transistor Datasheet - cover page
Brand
Infineon
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
10
File format
PDF
File size
275 KB
Published
06 April, 2012
Updated
30 September, 2023
MD5 checksum
9A77374BC1D62CD0D53F0059CD311AF8

About this manual

The IPP50R399CP is a CoolMOS™ power transistor designed for hard and soft switching SMPS topologies, DCM PFC, and lamp‑ballast applications. It offers ultra‑low gate charge, low on‑resistance, and high peak current capability while complying with RoHS.

The datasheet lists maximum ratings, thermal and electrical characteristics, dynamic behavior, and typical output curves. Key parameters such as continuous drain current, gate threshold voltage, on‑state resistance, and avalanche energy are detailed for designers.

What's inside

  • Product Summary
  • Maximum ratings
  • Thermal characteristics
  • Electrical characteristics
  • Static characteristics
  • Dynamic characteristics
  • Gate Charge Characteristics
  • Typical output characteristics
  • Outline
  • Legal Disclaimer

Specifications

Continuous drain current (Id)9 A
Pulsed drain current (Id,pulse)20 A
Power dissipation (Pd) at 25 °C83 W

Frequently asked questions

What is the maximum continuous drain current of the IPP50R399CP?

The device can handle a continuous drain current of 9 A at 25 °C.

How much power can the transistor dissipate at 25 °C?

It can dissipate up to 83 W at 25 °C.

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