BSO104N03S is a N-channel MOSFET from Infineon with excellent switching speed and low on-resistance, suitable for notebook DC/DC converters and other applications.
The Infineon BSO104N03S is an N‑channel, logic‑level power MOSFET designed for SMPS and notebook DC‑DC converters. It offers low on‑resistance, fast switching, and high avalanche capability, and complies with RoHS requirements.
The datasheet provides maximum ratings, thermal and electrical characteristics, dynamic switching parameters, gate charge information, and the PG‑DSO‑8 package outline. It also includes safe operating area graphs and reverse diode specifications.
| Continuous drain current (Id) at 25 °C | 13 A |
|---|---|
| Pulsed drain current (Id,pulse) at 25 °C | 52 A |
| Drain‑source breakdown voltage (Vds) | 30 V |
| Gate threshold voltage (Vgs(th)) | 1.2 V – 1.6 V |
| Package type | PG‑DSO‑8 |
| RoHS compliance | Yes |
The device can handle a continuous drain current of 13 A at 25 °C.
The gate threshold voltage ranges from 1.2 V to 1.6 V.
It is supplied in a PG‑DSO‑8 surface‑mount package.
Yes, the device is Pb‑free and RoHS compliant.