The document describes the features and characteristics of the SPD04N80C3 Cool MOS™ power transistor, including new revolutionary high voltage technology, ultra low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra low effective capacitances, improved transconductance, etc.
The SPDO4N80C3 is a high‑voltage, low‑gate‑charge MOSFET in a PG‑TO252 package. It offers ultra‑low gate charge, high dv/dt capability, and is RoHS compliant. Key features include a 800 V drain‑source breakdown voltage, 4 A continuous drain current, and a low on‑resistance.
The device is qualified for target applications according to JEDEC standards and includes detailed thermal characteristics, safe operating area curves, and gate‑charge data. Mechanical dimensions and package drawings are provided for PCB layout. The datasheet also contains legal disclaimer and contact information for Infineon Technologies.