This document describes the features and characteristics of the SPD06N80C3 Cool MOS™ power transistor, including high voltage technology, low RDS(on), ultra-low gate charge, periodic avalanche rating, and extreme dv/dt rating.
The SPDO6N80C3 is a Cool MOS power transistor offered in a PG‑TO252 (D‑PAK) package. The document provides detailed maximum ratings, thermal characteristics, and electrical parameters for design and application.
Key sections cover maximum voltage and current ratings, gate‑threshold specifications, capacitances, avalanche energy, and typical output and transfer characteristics, as well as package dimensions and legal notices.
| Continuous drain current (Id) | 6 A (at 25 °C) |
|---|---|
| Power dissipation (Pd) | 83 W (at 25 °C) |
| Avalanche energy (single pulse) | 230 mJ |
| Gate‑source voltage rating (Vgs) | +20 V |
The device can conduct a continuous drain current of 6 A at 25 °C.
The allowed gate‑source voltage is up to +20 V.