The features of IPW50R399CP CoolMOSTM Power Transistor include the lowest RON x Qg, ultra low gate charge, extreme dv/dt rating, high peak current capability, lead-free lead plating, RoHS compliant, and qualified according to JEDEC1) for target applications. CoolMOS CP is designed for: Hard and soft switching SMPS topologies, DCM PFC for Lamp Ballast, PWM for Lamp Ballast, LCD & PDP TV.
The IPW50R399CP is a CoolMOS power transistor designed for hard and soft switching SMPS topologies, DCM PFC for lamp ballast, and PWM applications. It features ultra‑low gate charge, low on‑state resistance, and high peak current capability while being Pb‑free and RoHS compliant.
The document lists detailed electrical, thermal, and dynamic characteristics, including maximum ratings, on‑state resistance, gate charge, capacitances, and avalanche energy, as well as mechanical dimensions and package outline for the PG‑TO247 package.
| Continuous Drain Current (Id) | 9 A @ 25 °C |
|---|---|
| On‑State Resistance (Rds(on)) | 0.36 mΩ typical, 0.399 mΩ max @ 25 °C |
| Gate Threshold Voltage (Vgs(th)) | 2.5 V – 3.5 V |
| Total Gate Charge (Qg) | 17 nC |
The device can handle a continuous drain current of 9 A at 25 °C.
The on‑state resistance is typically 0.36 mΩ and up to 0.399 mΩ at 25 °C.
The total gate charge is 17 nC from 0 V to 10 V.