SPP06N60C3 CoolMOSTM Power Transistor is a high performance power transistor with ultra low gate charge, periodic avalanche rated, high peak current capability, ultra low effective capacitances and extreme dv/dt rated.
The SPPO6N60C3 is a high‑voltage power transistor featuring ultra‑low gate charge, high peak current capability, and extreme dv/dt rating. The document lists its key features, maximum ratings, and typical performance curves.
Detailed sections cover thermal characteristics, static and dynamic electrical parameters, reverse‑diode behavior, transient thermal impedance, and mechanical dimensions. Designers can use the provided specifications to evaluate suitability for high‑power applications.
| Continuous drain current (Id) | 6.2 A |
|---|---|
| Pulsed drain current (Id,pulse) | 18.6 A |
| Input capacitance (Ciss) | 620 pF |
| Output capacitance (Coss) | 200 pF |
| Reverse diode forward voltage | 0.97 V (typ) |
| Power dissipation (PD) | 74 W |
The maximum continuous drain current is 6.2 A at 25 °C.
The device can dissipate up to 74 W at 25 °C.